Nonvolatile semiconductor memory device and its manufacturing method

ABSTRACT

A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes element isolation/insulation films buried into a silicon substrate to isolate stripe-shaped element-forming regions. Formed on the substrate area floating gate via a first gate insulating film and further a control gate via a second gate insulating film. Source and drain diffusion layers are formed in self-alignment with control gates. The second gate insulating film on the floating gate is divided and separated together with the floating gate by slits above the element isolation/insulation films into discrete portions of individual memory cells.

CROSS REFERENCE TO RELATED APPLICATION

This application claims benefit of priority under 35USC §119 to JapanesePatent Application No. Hei 11-350841(1999), filed on Dec. 9, 1999, theentire contents of which are incorporated by reference herein.

BACKGROUND OF THE INVENTION

This invention relates to a nonvolatile semiconductor memory device andits manufacturing method.

There is known an electrically rewritable, nonvolatile semiconductormemory (EEPROM: electrically erasable and programmable read-only-memory)using memory cells of a stacked-gate structure stacking floating gatesand control gates. This kind of EEPROM uses a tunneling insulation filmas a first gate insulating film between floating gates and asemiconductor substrate and typically uses, as the second gateinsulating film between floating gates and control gates, an ONO filmwhich is a multi-layered film of a silicon oxide film (O) on a siliconnitride film (N) on a silicon oxide film (O).

Each memory cell is formed in an element-forming region partitioned byan element isolation/insulation film. In general, a floating gateelectrode film is divided in the direction of control gate line (wordline) by making a slit on the element isolation/insulation film. In thestep of making the slit, division of floating gates in the bit-linedirection is not yet done. Then a control gate electrode film is stackedvia an ONO film on all surfaces of the substrate including the top ofthe slit-processed floating gate electrode film, and by sequentiallyetching the control gate electrode film, ONO film, and floating gateelectrode film, control gates and floating gates are isolated in thebit-line direction. After that, source and drain diffusion layers areformed in self-alignment with the control gates.

In the above-introduced conventional EEPROM structure, floating gates ofmemory cells adjacent in the word-line direction are isolated on theelement isolation/insulation film, but the ONO film formed thereon iscontinuously made in the word-line direction. It is already known that,if the isolation width (slit width) of floating gates in the word-linedirection is narrowed by miniaturization of memory cells, this structureis subject to movements of electric charges through the ONO film whenthere is a difference in charge storage status between adjacent floatinggates. This is because electric charges are readily movable in thelateral direction in the silicon nitride film or along the boundariesbetween the silicon nitride film and the silicon oxide films of the ONOfilm. Therefore, in microminiaturized EEPROM, when adjacent memory cellsin the word-line direction have different data states, their thresholdvalues vary due to movements of electric charges, and often result indestruction of data.

SUMMARY OF THE INVENTION

It is therefore an object of the invention to provide a nonvolatilesemiconductor memory device improved in reliability by preventingdestruction of data caused by movements of electric charges betweenfloating gates, and also relates to its manufacturing method.

According to the first aspect of the invention, there is provided anonvolatile semiconductor memory device comprising:

a semiconductor substrate;

a plurality of element-forming regions partitioned by elementisolation/insulation films in said semiconductor substrate;

floating gates formed in said element-forming regions via a first gateinsulating film and separated for individual said element-formingregions;

second gate insulating films formed on said floating gates, and dividedand separated above said element isolation/insulation films;

control gates formed on said floating gates via said second gateinsulating films; and

source and drain diffusion layers formed in self-alignment with saidcontrol gates.

According to the second aspect of the present invention, there isprovided a nonvolatile semiconductor memory device comprising:

a semiconductor substrate;

a plurality of element-forming regions partitioned by elementisolation/insulation films in said semiconductor substrate;

floating gates formed in said element-forming regions via a first gateinsulating film and separated for individual said element-formingregions;

a second gate insulating film formed on said floating gates tocontinuously extend over a plurality of element-forming regions alongrecesses made into surfaces of said element isolation/insulation films;

control gates formed on said floating gates via said second gateinsulating film; and

source and drain diffusion layers formed in self-alignment with saidcontrol gates.

According to the third aspect of the present invention, there isprovided a manufacturing method of a nonvolatile semiconductor memorydevice, comprising the steps of:

making element isolation/insulation films that partition element-formingregions in a semiconductor substrate;

stacking a first gate electrode material film and a second gateinsulating film on said semiconductor substrate via a first gateinsulating film;

etching said second gate insulating film and the underlying first gateelectrode material film to make slits that separate said first gateelectrode material film above said element isolation/insulation films;

forming an insulating film on side surfaces of said first gate electrodematerial film, and thereafter stacking a second gate electrode materialfilm;

sequentially etching said second gate electrode material film, saidsecond gate insulating film and said first gate electrode material filmto pattern said first gate electrode film into floating gates and saidsecond gate electrode material film into control gates; and

making source and drain diffusion layers in self alignment with saidcontrol gates.

According to the fourth aspect of the present invention, there isprovided a manufacturing method of a nonvolatile semiconductor memorydevice, comprising the steps of:

making element isolation/insulation films that partition element-formingregions in a semiconductor substrate;

stacking a first gate electrode material film and a second gateinsulating film on said semiconductor substrate via a first gateinsulating film;

etching said second gate insulating film and the underlying first gateelectrode material film to make slits that separate said first gateelectrode material film above said element isolation/insulation films;

sequentially stacking a third gate insulating film and a second gateelectrode material film;

sequentially etching said second gate electrode material film, saidthird and second gate insulating films, and said first gate electrodematerial film to pattern said first gate electrode material film intofloating gates and said second gate electrode material film into controlgates; and

making source and drain diffusion layers in self-alignment with saidcontrol gates.

According to the fourth aspect of the present invention, there isprovided a manufacturing method of a nonvolatile semiconductor memorydevice, comprising the steps of:

making element isolation/insulation films that partition element-formingregions in a semiconductor substrate;

stacking a first gate electrode material film on said semiconductorsubstrate via a first gate insulating film;

etching said first gate electrode material film to make slits thatseparate said first gate electrode material film on said elementisolation/insulation films;

etching surfaces of said element isolation/insulation films exposed tosaid slits to make recesses;

stacking a second gate electrode material film on said first gateelectrode material film and said element isolation/insulation films viasaid first gate insulating film;

sequentially etching said second gate electrode material film, said gateinsulating film and said first gate electrode material film to patternsaid first gate electrode material film into floating gates and saidsecond gate electrode material film into control gates; and

making source and drain diffusion layers in self-alignment with saidcontrol gates

According to the invention, by isolating the second gate insulating filmbetween the floating gates and the control gates in a region betweenadjacent memory cells via an element isolation/insulation film, electriccharges are prevented from moving between adjacent floating gates viathe second gate insulating film.

Furthermore, even when the second gate insulating film is not completelyisolated on the device isolation film, if a recess is made on thesurface of the element isolation/insulation film to have the second gateinsulting film extend along the recess, it is substantially equivalentto an increase of the distance between adjacent floating gates, and hereagain results in preventing movements of electric charges betweenadjacent floating gates.

Therefore, also when memory cells are miniaturized, the inventionprevents data destruction due to movements of electric charges andimproves the reliability.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a layout of a memory cell array of EEPROM according toEmbodiment 1 of the invention;

FIGS. 2A and 2B are cross-sectional views taken along the A-A′ line andB-B′ line of FIG. 1;

FIGS. 3A and 3B are cross-sectional views for showing a manufacturingprocess of Embodiment 1;

FIGS. 4A and 4B are cross-sectional views for showing the manufacturingprocess of Embodiment 1;

FIGS. 5A and 5B are cross-sectional views for showing the manufacturingprocess of Embodiment 1;

FIGS. 6A and 6B are cross-sectional views for showing the manufacturingprocess of Embodiment 1;

FIGS. 7A and 7B are cross-sectional views for showing the manufacturingprocess of Embodiment 1;

FIGS. 8A and 8B are cross-sectional views for showing the manufacturingprocess of Embodiment 1;

FIGS. 9A and 9B are cross-sectional views for showing a manufacturingprocess of Embodiment 2 of the invention;

FIGS. 10A and 10B are cross-sectional views for showing themanufacturing process of Embodiment 2;

FIGS. 11A and 11B are cross-sectional views for showing themanufacturing process of Embodiment 2;

FIGS. 12A and 12B are cross-sectional views for showing themanufacturing process of Embodiment 2;

FIGS. 13A and 13B are cross-sectional views for showing a manufacturingprocess of Embodiment 3 of the invention;

FIGS. 14A and 14B are cross-sectional views for showing themanufacturing process of Embodiment 3;

FIGS. 15A and 15B are cross-sectional views for showing themanufacturing process of Embodiment 3;

FIGS. 16A and 16B are cross-sectional views for showing themanufacturing process of Embodiment 3;

FIGS. 17A and 17B are cross-sectional views of EEPROM according to thefourth embodiment of the invention, which correspond to FIGS. 2A and 2B;

FIG. 18 is a cross-sectional view for showing the manufacturing processof Embodiment 4;

FIG. 19 is a cross-sectional view for showing the manufacturing processof Embodiment 4;

FIG. 20 is a cross-sectional view for showing the manufacturing processof Embodiment 4;

FIG. 21 is a cross-sectional view for showing the manufacturing processof Embodiment 4;

FIG. 22 is a cross-sectional view for showing the manufacturing processof Embodiment 4;

FIG. 23 is a cross-sectional view for showing the manufacturing processof Embodiment 4;

FIG. 24 is a cross-sectional view for showing the manufacturing processof Embodiment 4;

FIG. 25 is a cross-sectional view for showing the manufacturing processof Embodiment 4; and

FIG. 26 is a diagram that shows correlation between defective numbers ofbits and slit widths for explaining effects of Embodiment 4.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Explained below are embodiments of the invention with reference to thedrawings.

Embodiment 1

FIG. 1 is a layout of a cell array of NAND type EEPROM according toEmbodiment 1 of the invention. FIGS. 1A and 2B are cross-sectional viewstaken along the A-A′ line and B-B′ line of FIG. 1.

The memory cell array is formed on a p-type well of a silicon substrate1. The silicon substrate 1 has formed device isolation channels 3 buriedwith device isolation films 4 to define stripe-shaped element-formingregions 2.

In the element-forming regions 2, floating gates 6 are formed via firstgate insulating films 5 as tunneling insulation films. Floating gates 6have a two-layered structure stacking first polycrystalline silicon (oramorphous silicon) films 6 a made before isolation of devices and secondpolycrystalline silicon (or amorphous silicon) films 6 b made afterisolation of devices, and they are divided for individual memory cells.

Formed on the floating gates 6 are control gates 8 via second gateinsulating films 7. Control gates 8 have a two-layered structure ofpolycrystalline silicon (or amorphous silicon) films 8 a and tungstensilicide (WSi) films 8 b. The control gates 8 are patterned tocontinuously extend over a plurality of element-forming regions 2 in thecross-section of FIG. 2A, and they form word lines WL.

The second gate insulating films 7 between the floating gates 6 and thecontrol gates 8 are ONO films. In this embodiment, second gateinsulating films 7 are divided by slits 13 on elementisolation/insulation films 4 to lie merely on floating gates 6 alongword line directions in the cross-section of FIG. 2A. Therefore, on sidesurfaces of floating gates 6, silicon oxide films 9 are formed toisolate floating gates 6 from control gates 8.

Source and drain diffusion layers 12 are formed in self alignment withcontrol gates 8, and a plurality of memory cells are serially connectedto form NAND type cell units.

At the drain side of one-side ends of NAND type cell units, selectiongates 13 formed simultaneously with control gates 8 are located, and bitlines (BL) 11 are connected to their drain diffusion layers. Theselection gates 13 portion has the same multi-layered gate structure asthe gate portions of memory cells, but the first gate electrode materialfilm in that portion is not isolated as floating gates, and two layersintegrally form selection gates 13 short-circuited at predeterminedpositions. In the selection gates 13 portion, the first gate insulatingfilm 5′ is thicker than that of the memory cell region. Although notshown, the other end source side of the NAND cell units is made in thesame manner as the drain side.

A specific manufacturing process of EEPROM according to the embodimentis explained with reference to FIGS. 3A and 3B through FIGS. 8A and 8B,which are cross-sectional views corresponding to FIGS. 2A and 2B, underdifferent stages of the process.

As shown in FIGS. 3A and 3B, first stacked on a silicon substrate 1 is a10 nm thick silicon oxide film as the first gate insulating film 5, a 60nm thick first polycrystalline silicon film 6 a, which is a gateelectrode material film, is next stacked thereon, and a mask material 21is further stacked for device isolation processing. In the region forthe gate transistors, a gate insulating film 5′ thicker than that of theregion for cell transistors. The mask material 21 is a multi-layeredfilm stacking a silicon nitride film and a silicon oxide film. The maskmaterial 21 is patterned and left only in element-forming regions, andby using it, the polycrystalline silicon film 6 a, first gate insulatingfilm 5, 5′ are etched, and the substrate 1 is additionally etched, toform device-isolating grooves 3.

After that, it is annealed in an O₂ atmosphere at 1000° C. to create asilicon oxide film 22 of about 6 nm on inner walls of thedevice-isolating grooves 3 as shown in FIGS. 4A and 4B. Subsequently, asilicon oxide film is stacked by plasma CVD and then smoothed by CMP soas to bury it as element isolation/insulation films 4 in thedevice-isolating grooves 3. Then, after annealing it in a nitrogenatmosphere at 900° C., the mask material 21 is removed. Removal of thesilicon nitride film relies on phosphoric-acid treatment at 150° C.

After that, as shown in FIGS. 5A and 5B, the second polycrystallinesilicon film 6 b doped with phosphorus is stacked by low-pressure CVD,and an ONO film to be used as the second gate insulating film 7 isstacked successively. Then, using a resist pattern having apertures onelement isolation/insulation films 4 as a mask, the second gateinsulating film 7 and the second polycrystalline silicon film 6 b areetched by RIE to make slits 13 that isolate floating gates 6 on elementisolation/insulation films 4 as shown in FIGS. 6A and 6B. The slits 13have a length enough to extend through a plurality of memory cells inthe NAND cell unit. Differently from prior art techniques, the secondgate insulating film 7 is simultaneously isolated by slits 13 on theelement isolation/insulation films 4.

Side surfaces of the polycrystalline silicon film 6 b exposed byformation of slits 13 are protected by heating the structure in an O₂atmosphere at 1000° C. and thereby creating a silicon oxide film 9.After that, as shown in FIGS. 7A and 7B, a polycrystalline silicon film8 a dopes with phosphorus is stacked as the gate electrode material filmby CVD, and a WSi film 8 b is successively stacked thereon.

A resist is next applied and patterned, and the WSi film 8 b,polycrystalline silicon film 8 a, gate insulating film 7,polycrystalline silicon films 6 b, 6 b, and gate insulating film 5 aresequentially etched to make control gates 8 in the pattern of continuousword lines WL, and divide the floating gates 6 into discrete forms inthe bit-line direction. Thereafter, by ion implantation, source anddrain diffusion layer 12 in self-alignment with the control gates 8 areformed for individual memory cells.

As to the selection gate line SG, the lower gate electrode materialfilms 7 a, 6 b are not divided on the element isolation/insulation films4, but they are continuously patterned integrally with the upper gateelectrode material films 8 a, 8 b.

Thereafter, as shown in FIGS. 2A and 2B, an inter-layer insulating film10 is stacked, contact holes are made, and bit lines 11 are stacked andpatterned.

As explained above, according to the embodiment, the second gateelectrode material film in form of ONO film on floating gates 6 isdivided simultaneously with the floating gates 6 on the elementisolation/insulation films 4. Therefore, even in a structure wherefloating gates of adjacent memory cells are closely located, leakage ofelectric charges does not occur, and data is reliably kept in eachmemory cell.

Embodiment 2

FIGS. 9A and 9B through FIGS. 12A and 12B show a manufacturing processaccording to another embodiment. Parts or elements corresponding tothose of the former embodiment are labeled with the common referencenumerals, and their detailed explanation is omitted. Also in thisembodiment, the second gate insulating film 7 in form of ONO film on thefloating gates 6 is divided on the element isolation/insulation films 4,but its process is different from the former embodiment.

Up to the step shown in FIGS. 5A and 5B, the process is the same as thatof the former embodiment. After that, as show in FIGS. 9A and 9B, asilicon oxide film 31 is stacked on the second gate insulating film 7,and slit-making apertures 13′ are opened on the elementisolation/insulation films 4. Further stacked thereon a silicon oxidefilm 32. It then undergoes etching-back to be maintained side spacersonly in the apertures 13′ as shown in FIGS. 10A and 10B. In this status,using the silicon oxide films 31, 32 as a mask, the second gateinsulating film 7 and the polycrystalline silicon film 6 b are etched byRIE. As a result, similarly to the former embodiment, slits 13 are madeto divide the second gate insulating film 7 and the polycrystallinesilicon film 6 b on the element isolation/insulation film 4 intodiscrete portions.

Subsequently, after removing the silicon oxide films 31, 32 by HF, asilicon oxide film 33 is stacked on the entire surface by low-pressureCVD as shown in FIGS. 11A and 11B.

This silicon oxide film 33, after deposition, is heated in an O₂atmosphere at 1000° C. and thereby changed to a compact oxide filmwithout movements of electric charges, or the like. The silicon oxidefilm 33, as well as the second gate insulating film 7, functions as agate insulating film, and functions as an insulating film that protectsside surfaces of the polycrystalline silicon film 6 b.

After that, as shown in FIGS. 12A and 12B, the polycrystalline siliconfilm 8 a and the WSi film 8 b are sequentially stacked, then patternedin the same manner as the foregoing embodiment to form control gates 8and floating gates 6 and the source drain diffusion layers 12 are made.

Also in this embodiment, similarly to the foregoing embodiment, the gateinsulating film is cut and separated at device-isolating regions.Therefore, excellent data holding property is obtained.

Embodiment 3

FIGS. 13A, 13B through FIGS. 16A, 16B show a manufacturing processaccording to a still another embodiment. Although the former embodiment,as shown in FIGS. 5A and 5B, sequentially stacked the second-layerpolycrystalline silicon film 6 b and the second gate insulating film 7,the embodiment shown here stacks makes slits 13 for separating thesecond-layer polycrystalline silicon film 6 b above the elementisolation/insulation films 4 before stacking the second gate insulatingfilm 7 as shown in FIGS. 13A and 13B. The second gate insulating film 7is stacked thereafter. Then, a resist pattern (not shown) having thesame apertures as the slits 13 is applied on the second gate insulatingfilm 6 b, and the second gate insulating film 6 b is etched by RIE andseparated at portions of the slits 13 as shown in FIGS. 14A and 14B.After that, in the same manner as the former embodiment, thephosphorus-doped polycrystalline silicon film 8 a is stacked as a gateelectrode material film by CVD, and the WSi film 8 b is successivelystacked thereon.

Subsequently, by providing a pattern of a resist, the WSi film 8 b,polycrystalline silicon film 8 a, gate insulating film 7,polycrystalline silicon films 6 b, 6 a and gate insulating film 5 aresequentially etched by RIE so as to pattern the control gate 8 intocontinuous word lines WL and simultaneously separate the floating gate 6into discrete memory cells in the bit-line direction. Then, byintroducing ions, source and drain diffusion layers 12 for respectivememory cells are made in self-alignment with the control gates 8.

This embodiment also separates the second gate insulating film 7 on thefloating gates 6 above the element isolation/insulation films 4, andprovides excellent data-holding property equivalent to the formerembodiments.

Embodiment 4

All embodiments explained heretofore cut and separate the second gateinsulating film 7 above the element isolation/insulation films 4. Theinstant embodiment, however, is intended to obtain substantially thesame effect without cutting and separating it. Cross-sectional aspectsof this embodiment are shown in FIGS. 17A and 17B, which correspond toFIGS. 2A and 2B.

The structure shown in FIGS. 17A and 17B is different from that of FIGS.2A and 2B in making slits 13 for separating the floating gate 6 abovethe element isolation/insulation films 4 prior to stacking the secondgate insulating film 7 and simultaneously conducting recess-etching ofthe element isolation/insulation films 4 to make recesses 41. Therefore,the first gate insulating film 7 is disposed along the recesses formedon surfaces of the element isolation/insulation films 4.

As shown in FIG. 17A, assigning a to the width of each slit 13 and hencethe width of each recess 41 formed into each elementisolation/insulation film 4, and b to the depth of each recess 41,distance between adjacent floating gates is substantially a+2 b. Byadjusting this distance to a value diminishing movements of electriccharges between floating gates to a negligible value, excellentdata-holding property equivalent to that of the foregoing embodimentscan be obtained.

A specific manufacturing process according to this embodiment isexplained with reference to FIGS. 18 through 25, taking thecross-section of FIG. 17A into account. As shown in FIG. 18, a siliconoxide film, approximately 8 nm thick, is formed as the first gateinsulating film 5 on a silicon substrate 1, and the firstpolycrystalline silicon film 6 a is stacked thereon up to a thicknessaround 60 nm by low-pressure CVD. Successively, a 150 nm thick siliconnitride film 21 a and a 165 nm thick silicon oxide film 21 b are stackedby low-pressure CVD.

Subsequently, after conducting oxidation by combustion of hydrogen at850° C. for 30 minutes, a resist pattern is formed to cover thedevice-isolating regions by lithography, and the silicon oxide film 21 band the silicon nitride film 21 a are etched by RIE to make a patternedmask. Using this mask, the polycrystalline silicon film 6 a and the gateinsulating film 5 are etched by RIE, and the silicon substrate 1 isadditionally etched, thereby to make the device isolating grooves 3. Asa result, stripe-shaped element-forming regions 2 are defined.

Subsequently, after making a thermal oxide film on sidewalls of thedevice isolating grooves 3, a silicon oxide film 4 is stacked by plasmaCVD, and then flattened by CMP, thereby to bury the device isolatinggrooves 3 with it as shown in FIG. 19. The silicon oxide film 21 b isremoved by buffering fluoric acid, and the silicon nitride film 21 a isremoved by treatment using phosphoric acid at 150° C. for 30 minutes,thereby to obtain the state of FIG. 20.

After that, as shown in FIG. 21, the second polycrystalline silicon film6 b, 100 nm thick, is stacked by low-pressure CVD. After that, as shownin FIG. 22, a silicon oxide film 42 is stacked to a thickness around 230nm by low-pressure CVD, and through lithography and RIE, apertures 13′for making slits are made. Further, as shown in FIG. 23, a silicon oxidefilm 43, approximately 70 nm thick, is stacked by low-pressure CVD, andby an etch-back process, it is maintained as side spacers only on sidewalls of the apertures 13′.

After that, using the silicon oxide films 42, 43 as a mask, thepolycrystalline silicon film 6 b is etched by RIE to make slits 13 forisolating floating gates, as shown in FIG. 24. Furthermore, surface ofthe element isolation/insulation film 4 is etched by RIE having a largeselectivity relative to the polycrystalline silicon, thereby to makerecesses 41 of the same width as that of slits 13 in the elementisolation/insulation film 4.

Subsequently, after removing the silicon oxide films 42, 43 by treatmentusing O₂ plasma and HF, the second gate insulating film 7 in form of 17nm thick ONO film is stacked as shown in FIG. 25, and successivelythereafter, a 100 nm thick third polycrystalline silicon film 8 a bylow-pressure CVD and a 50 nm thick WSi film 8 b by plasma CVD aresequentially stacked.

Thereafter, although not shown, through the same steps as those of theforegoing embodiments, gate portions are divided into discrete memorycells, and source and drain diffusion layers are formed.

FIG. 26 shows correlations between slit width separating adjacentfloating gates and number of defective bits occurring upon movements ofelectric charges between floating gates.

Arrows in FIG. 26 show the range of variance in number of defectivebits, and the curve connecting their average values. It is observed thatminiaturization of memory cells to enhance the density to the extentdecreasing the slit width to 0.14 μm or less invites a serious increaseof defective bits. According to the embodiment shown here, substantialslit width can be a+2 b by the depth b of the recess in the elementisolation/insulation film 4 relative to the slit width a on the plane.More specifically, in a 256 Mbit NAND type EEPROM, if specificationsabout defective bits require 2 bits/chip, at least 0.14 μm is requiredas the slit width. In this embodiment, therefore, by making the recess41 to satisfy a+2 b>0.14 [μm], that specification can be satisfied.

In EEPROM according to the invention described above, by separatingsecond gate insulting films between floating gates and control gatesabove element isolation/insulation films between adjacent memory cellsinterposing the element isolation/insulation film between them,movements of electric charges between adjacent floating gates can beprevented.

Alternatively, even without fully separating the second gate insulatingfilm above device isolating films, by making recesses into surfaces ofthe element isolation/insulation films and allowing the second gateinsulating film to be continuous along the recesses, distance betweenadjacent floating gates increases substantially, and movements ofelectric charges between adjacent floating gates can be prevented.Therefore, even when memory cells are microminiaturized, datadestruction caused b movements of electric charges can be prevented.

1. A nonvolatile semiconductor memory device, comprising: asemiconductor substrate having a first upper surface; an elementisolation portion protruding from the first upper surface, the elementisolation portion including an upper end portion having a highestportion and a recess, the recess having a bottom portion and an innerside surface; a first gate electrode film including a second uppersurface, the first gate electrode film formed above the first uppersurface via a first insulating film, a height of the second uppersurface from the first upper surface being lower than a height of thehighest portion and being higher than a height of the bottom portionfrom the first upper surface; a second gate electrode film including athird upper surface, the second gate electrode film formed on the firstgate electrode film and separated from an adjacent gate electrode filmby the element isolation portion, a height of the third upper surfacefrom the first upper surface being higher than a height of the highestportion from the first upper surface; a second insulating film formed onthe second gate electrode film and the inner side surface of the recess,the second insulating film contacting to the whole inner side surface ofthe recess; and a third gate electrode film formed on the secondinsulating film and embedded inside of the inner side surface in therecess.
 2. The nonvolatile semiconductor memory device according toclaim 1, wherein the second gate electrode film further includes anupper side surface and a lower side surface located below the upper sidesurface, the lower side surface faces to the element isolation portion,and the upper side surface is continuous with the inner side surface ofthe recess.
 3. The nonvolatile semiconductor memory device according toclaim 1, wherein the upper side surface of the second gate electrodefilm is located on the upper end portion of the element isolationportion.
 4. The nonvolatile semiconductor memory device according toclaim 2, wherein the upper side surface of the second gate electrodefilm is flush with the inner side surface of the recess.
 5. Thenonvolatile semiconductor memory device according to claim 1, whereinthe second insulating film includes a pair of silicon oxide films and asilicon nitride film located between the silicon oxide films.
 6. Thenonvolatile semiconductor memory device according to claim 2, whereinthe inner side surface of the recess is perpendicularly formed to thefirst upper surface of the semiconductor substrate.
 7. A nonvolatilesemiconductor memory device, comprising: a semiconductor substratehaving a first upper surface; an element isolation portion protrudingfrom the first upper surface, the element isolation portion including anupper end portion having a highest portion, a recess having a bottomportion, and a side upper portion having an inclined surface, the recesshaving an inner side surface, and a height of a bottom portion from thefirst upper surface being lower than a height of a lower edge of theinclined surface from the first upper surface; a floating gate includinga second upper surface, the floating gate formed above the first uppersurface via a first insulating film and separated from an adjacentfloating gate by the element isolation portion, a height of the secondupper surface from the first upper surface being higher than a height ofthe highest portion from the first upper surface; a second insulatingfilm formed on the floating gate and the inner side surface of therecess, the second insulating film contacting to the whole inner sidesurface of the recess; and a control gate formed on the secondinsulating film and embedded inside of the inner side surface of therecess.
 8. The nonvolatile semiconductor memory device according toclaim 7, wherein the floating gate includes a lower side surface and anupper side surface located on the lower side surface, the lower sidesurface faces the element isolation portion, and the upper side surfaceis located on the upper end portion of the element isolation portion. 9.The nonvolatile semiconductor memory device according to claim 8,wherein the upper side surface of the floating gate is continuous withthe inner side surface of the recess.
 10. The nonvolatile semiconductormemory device according to claim 9, wherein the upper side surface ofthe floating gate is flush with the inner side surface of the recess.11. The nonvolatile semiconductor memory device according to claim 8,wherein the inner side surface of the recess is perpendicularly formedto the first upper surface of the semiconductor substrate.
 12. Thenonvolatile semiconductor memory device according to claim 7, whereinthe second insulating film includes a pair of silicon oxide films and asilicon nitride film located between the silicon oxide films.
 13. Anonvolatile semiconductor memory device, comprising: a semiconductorsubstrate having a first upper surface; an element isolation portionprotruding from the first upper surface, the element isolation portionincluding an upper end portion having a highest portion and a recess,the recess having an inner side surface and a bottom portion; a floatinggate including a second upper surface, the floating gate formed abovethe first upper surface via a first insulating film and separated froman adjacent floating gate by the element isolation portion, a height ofthe second upper surface from the first upper surface being higher thana height of the highest portion from the first upper surface; a secondinsulating film formed on the floating gate and the inner side surfaceof the recess, the second insulating film contacting to the whole innerside surface of the recess; and a control gate formed on the secondinsulating film and embedded inside of the inner side surface of therecess, wherein a height of the bottom portion from the first uppersurface is the same as a height of the first upper surface.
 14. Thenonvolatile semiconductor memory device according to claim 13, whereinthe floating gate includes a lower side surface and an upper sidesurface, the lower side surface faces the element isolation portion andthe upper side surface is located on the upper end portion of theelement isolation portion.
 15. The nonvolatile semiconductor memorydevice according to claim 14, wherein the upper side surface of thefloating gate is continuous with the inner side surface of the recess.16. The nonvolatile semiconductor memory device according to claim 15,wherein the upper side surface of the floating gate is flush with theinner side surface of the recess.
 17. The nonvolatile semiconductormemory device according to claim 15, wherein the inner side surface ofthe recess is perpendicularly formed to the first upper surface of thesemiconductor substrate.
 18. The nonvolatile semiconductor memory deviceaccording to claim 13, wherein the second insulating film includes apair of silicon oxide films and a silicon nitride film located betweenthe silicon oxide films.
 19. A nonvolatile semiconductor memory device,comprising: a semiconductor substrate having a first upper surface; anelement isolation portion protruding from the first upper surface, theelement isolation portion including an upper end portion having a firstside surface and a recess, the recess including a pair of inner sidesurfaces being continuous with each other; a floating gate formed abovethe first upper surface via a first insulating film and separated froman adjacent floating gate by the element isolation portion, the floatinggate including a second side surface facing to the first side surface ofthe recess, the whole second side surface facing one of the pair ofinner side surfaces in the recess via the element isolation portion; asecond insulating film formed on the floating gate and the pair of innerside surfaces of the recess, the second insulating film contacting tothe whole inner side surfaces; and a control gate formed on the secondinsulating film, the control gate embedded between the pair of innerside surfaces via the second insulating film.
 20. The nonvolatilesemiconductor memory device according to claim 19, wherein the floatinggate further includes a third side surface that is located on the upperend portion of the element isolation portion.
 21. The nonvolatilesemiconductor memory device according to claim 20, wherein the thirdside surface of the floating gate is continuous with the inner sidesurface of the recess.
 22. The nonvolatile semiconductor memory deviceaccording to claim 21, wherein the third side surface of the floatinggate is flush with one of the pair of inner side surfaces of the recess.23. The nonvolatile semiconductor memory device according to claim 21,wherein the pair of inner side surfaces are perpendicularly formed tothe first upper surface of the semiconductor substrate, respectively.24. The nonvolatile semiconductor memory device according to claim 19,wherein the second insulating film includes a pair of silicon oxidefilms and a silicon nitride film located between the silicon oxidefilms.